Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges

Abstract : A thermal impedance model of single-finger and multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented. The heat flow analysis through the device has to be considered in two diffusion parts: the front-end-of-line (FEOL) diffusion and the back-end-of-line (BEOL) diffusion. Therefore, this new thermal impedance model features multi-poles network which has been incorporated in HiCuM L2 compact model. The HiCuM compact model simulation results are compared with on-wafer low-frequency S-parameters measurements at room temperature highlighting the device frequency dependence of self-heating mechanism. The simulation results are also compared to pulse measurements to improve reliability analysis.
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Submitted on : Tuesday, September 3, 2019 - 9:26:57 AM
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Marine Couret, Gerhard Fischer, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux. Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges. 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS), Mar 2019, Kita-Kyushu City, Japan. pp.154-159. ⟨hal-02276656⟩

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