Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium - Interférometrie In-situ, Instrumentation pour la Microscopie Electronique Accéder directement au contenu
Article Dans Une Revue APL Materials Année : 2018

Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

Résumé

Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant diffusion were first investigated. After LTA at low energy densities, the P electrical activation was poor while the dopant distribution was mainly localized in the polycrystalline Ge resulting from the anneal. Conversely, full dopant activation (up to 1 1020 cm 3) in a perfectly recrystallized material was observed after annealing at higher energy densities. Measurements of lattice parameters performed on the fully activated structures show that P doping results in a lattice expansion, with a perpendicular lattice strain per atom Ps = +0.7 0.1 Å3. This clearly indicates that, despite the small atomic radius of P compared to Ge, the “electronic contribution” to the lattice parameter modification (due to the increased hydrostatic deformation potential in the conduction band of P doped Ge) is larger than the “size mismatch contribution” associated with the atomic radii. Such behavior, predicted by theory, is observed experimentally for the first time, thanks to the high sensitivity of the measurement techniques used in this work.
Fichier principal
Vignette du fichier
1.5022876.pdf (2.33 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-01796115 , version 1 (25-06-2019)

Licence

Paternité

Identifiants

Citer

Simona Boninelli, R. Milazzo, Robert Carles, Florent Houdellier, Ray Duffy, et al.. Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium. APL Materials, 2018, 6 (5), pp.058504. ⟨10.1063/1.5022876⟩. ⟨hal-01796115⟩
111 Consultations
42 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More