Nucleation and evolution of SiGe islands on Si(001)
Résumé
In this study, we report a systematic investigation of the metastable morphologies of Si Ge layers obtained by the interplay 1yx x Ž. of kinetics and thermodynamics during growth on Si 001. We show that three main growth regimes can be distinguished as a function of the misfit and of the deposited thickness. They correspond to three equilibrium steady state morphologies that consist Ž. of 105-facetted hut islands, huts and domes in coexistence , and a bimodal size distribution of domes, respectively. The shape transitions between these states are attributed to different levels of relaxation. ᮊ
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